At this week’s 2018 Symposia on VLSI Technology and Circuits, imec demonstrates for the first time the possibility to fabricate state-of-the-art spin-orbit torque MRAM (SOT-MRAM) devices on 300mm wafers using CMOS compatible processes.   With an unlimited endurance (>5×1010), fast switching speed (210ps), and power consumption as low as 300pJ, the SOT-MRAM devices manufactured in a 300mm line achieve the same or better performance as lab devices. This next-generation MRAM technology ta...